GOALI: Erbium Doped III-Nitrides for Optical Communications and Silicon Photonics
Project Award Date: 07-01-2012
The team will investigate, develop, and integrate the following novel approaches to create advanced photonic devices: (a) develop MOCVD growth technology for obtaining device quality Ill-nitrides on Si (001) substrates that are compatible with standard processes of CMOS; (b) optimize in-situ Er incorporation into III-nitride device structures; (c) develop device fabrication technology for the realization of Er-doped nitride optical amplifiers and emitters active at 1.5 ) um; (d) explore applications for Er-doped nitride optical devices in optical communication systems. Er-doped III-nitride material and photonic
structures may lead to novel electrically pumped emitters and optical amplifiers which would possess the advantages of both semiconductor optical amplifiers (small size, electrical pumping, and ability for photonic integration) and Er-doped fiber amplifiers (minimal crosstalk between different wavelength channels in optical networks).
Primary Sponsor(s): Texas Tech University