LAB 2: BJTs
Title: |
Bipolar Junction Transistor: A Single-Stage Amplifier |
Objective: |
To demonstrate the concept of large- and small-signal models, to determine the DC biasing, and to determine the small-signal parameters at low frequency, such as the voltage gain, current gain, input resistance, and output resistance of common-collector and common-emitter transistor circuit configurations. Various biasing regions will be observed, with major emphasis on the active region. |
Equipment and components: |
1 BJT (2N3904); 1 Potentiometer (5 k W); 5 Resistors (100 W, 510 W, 1 kW, 10 kW, 20 kW); capacitor (100 m F), oscilloscope; function generator; DC power supply. |
Note: |
Analyze (calculate) the circuits first. Compare your experiment measurements with your analysis predictions. Remember to include the resistance of the potentiometer in your analysis. Keep the transistor that you use properly after use, you will need to use it on later labs. |
Procedure
1. Set up the circuit shown below on a solderless breadboard. |
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Set iB = 10 m A. Vary VCC from 0 to 10 V in 0.5 V steps. Measure the corresponding iC and VCE. (IB should remain constant). Plot iC vs. vCE. Repeat the above step for iB = 30 m A. Use the graph to find b and Early voltage, VA. Also indicate the different regions on the graph. |
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2. Set up the common-emitter circuit shown below. |
VI = 3 V, vi = 0.1 sin (2p f t), f = 1 kHz. |
[rout is obtained by applying an ac test voltage on the output, with a capacitor (100 mC) placed between vo and vtest. vi is turned off. rout = vtest / itest] |
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3. Set up the common-collector circuit shown below. |
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VI = 3 V, vi = 0.2 sin (2p f t), f = 1 kHz. |
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